| PART |
Description |
Maker |
| APT12080LVR |
POWER MOS V 1200V 16A 0.800 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT1201R5B APT1201R5BVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1200V 10A 1.500 Ohm
|
http://
ADPOW[Advanced Power Technology]
|
| ISL9K30120 ISL9K30120G3 |
30A, 1200V Stealth?/a> Dual Diode
30A, 1200V Stealth⑩ Dual Diode
30A, 1200V Stealth Dual Diode
|
FAIRCHILD[Fairchild Semiconductor]
|
| RHRP30120 |
30A, 1200V Hyperfast Diode
|
Fairchild Semiconductor
|
| NGTB30N120IHSW |
IGBT 1200V 30A FS1 Induction Heating
|
ON Semiconductor
|
| APT8043SLL APT8043BLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗，高电压，N沟道增强型功率MOSFET的新一代
THYRISTOR PROTECT BIDIR 30A SMB 电源MOS 7TM是一个低损耗，高电压，N沟道增强型功率MOSFET的新一代
POWER MOS 7 800V 20A 0.430 Ohm
|
Advanced Power Technolo...
Advanced Power Technology, Ltd.
|
| RJK0855DPB RJK0855DPB-15 |
80V, 30A, 11 m max. Silicon N Channel Power MOS FET Power Switching
80V, 30A, 11 m?max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| RJK60S7DPK-M0 RJK60S7DPK-M0-T0 |
600V -30A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK60S7DPQ-E0-T2 |
600V -30A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| STGW30NC120HD STGW30NC120HD_07 GW30NC120HD STGW30N |
N-channel 1200V - 30A - TO-247 Very fast PowerMESH TM IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
| STGW30NC120HD0710 STGW30NC120HD |
N-channel 1200V - 30A - TO-247 very fast PowerMESH IGBT
|
STMicroelectronics
|
